***Venue for all conference events below:
Discovery Partners Institute, 200 S. Wacker Dr., Chicago 60606 (4th floor)
The technical program is available: see below
Overall schedule:
Monday 8/7/23
5:00 - 6:30 p.m., Registration and Welcome Reception
Tuesday 8/8/23
8:00am – 5:00pm Conference sessions and refreshments
Continental breakfast, breaks
12-1:00pm Lunch
5:30-7:00pm Dinner
Wednesday 8/9/23
8:00am – 4:30pm Conference sessions and refreshments
Continental breakfast, breaks
12:00 - 1:00 pm Lunch
Technical Program
August 8, 2023
Welcome and Introduction
8:15~8:30
Emerging Devices I, Session Co-Chairs: H. Tang and R. Kaplar
Mi
Umich
(Invited) Ferroelectric III-nitride Semiconductors: Epitaxy, Properties, and Emerging Device Applications
8:30~9:00
Vetury
Akoustis Technologies
(Invited) A Manufacturable AlScN Periodically Polarized Piezoelectric Film Bulk Acoustic Wave Resonator (AlScN P3F BAW) Operating in Overtone Mode at 10.7 GHz
9:00~9:30
Downey
NRL
(Invited) Epitaxial nitride materials and heterogeneous integration for advanced RF acoustic devices
9:30~10:00
Coffee Break
10:00~10:20
Optoelectronic Devices I, Session Co-Chairs: Z. Mi and C. Gupta
Tang
Yale
(Invited) Aluminum nitride photonic integrated circuits: from piezo-optomechanics to nonlinear optics
10:20~10:50
Matsuda
U of Kyoto
Chip-scale multi-wavelength InGaN LEDs utilizing patterned micro-topograph
10:50~11:10
Lin
U of Wisconsin
Understanding the impact of Mg-doped electron blocking layer (EBL)position in Ultraviolet-A III-Nitride Laser Diodes
11:10~11:30
Chiu
UIUC
Fabrication of Sub-Micron InGaN Based Light Emitting Diodes for Next Generation Displays
11:30~11:50
Lunch
11:50~13:00
Electronic Devices I, Session Co-Chairs: T. Anderson and Y. Cao
Zhao
OSU
(Invited) MOCVD growth of GaN and (Al)GaO for power electronic devices
13:00~13:30
Mahadik
NRL
Evolution of Dislocation Arrays and micro-cracks in Ammono-thermal GaN
13:30~13:50
Vangipuram
OSU
Suppressing Carbon Incorporation in MOCVD GaN for Vertical Power Device Applications
13:50~14:10
Hasan
NCSU
Mg-implanted vertical GaN pn diodes with regrown p++ layer to improve p-GaN contacts
14:10~14:30
Gallagher
NRL
Using Machine Learning Models to Locate Defective Regions on GaN Epi-Wafers
14:30~14:50
Coffee Break
14:40~15:10
Electronic Devices II, Session Co-Chairs: K. Chu and H. Zhao
Miller
AFRL
(Invited) Modeling and Simulation of GaN HEMTs using Fermi Kinetics Transport
15:10~15:40
Shamsir
U of Missouri
Electrothermal Modeling and Large Signal Analysis of GaN HEMT in Circuit Realization
15:40~16:00
Chen
U of Wisconsin
ALD-deposited TiN Schottky gate electrode design for high frequency GaN HEMT
16:00~16:20
Guan
Penn State
AlGaN/GaN Double-Channel MOS Gated Schottky Barrier Diode with Low Reverse Leakage Current
16:20~16:40
Sadek
Penn State
Conduction and Breakdown Mechanisms of Isolation in Gallium Nitride Devices
16:40~17:00
August 9, 2023
Electronic Devices III, Session Co-Chairs: T. Maeda and S. Krishnamoorthy
Doolittle
GaTech
(Invited) Semiconducting AlN Electrical Devices
8:30~9:00
Kumabe
Nagoya U
Minority and Majority Carrier Properties in Dopant-free p-type Distributed-polarization Doped AlGaN: Towards Application in Bipolar Devices
9:00~9:20
Larkin
ARL
Alpha Radiation Damage Assessment in GaN by Time-Resolved Luminescence Spectroscopy
9:20~9:40
Hendricks
AFRL
Unipolar Diode Power Switching Figure of Merit and Practical Limitations in Ultra-wide Bandgap Materials
9:40~10:00
Coffee Break
10:00~10:20
Electronic Devices IV, Session Co-Chairs: A. Doolittle and M. Wong
Khachariya
Adroit Materials
(Invited) Si-doped AlN Schottky Barrier Diodes on Bulk AlN substrates
10:20~10:50
Das
ASU
In-plane Anisotropy of MOCVD based In-situ Ga etching on (010) and (001) 𝛃-Ga2O
10:50~11:10
Munakata
U of Tokyo
Temperature dependence of barrier height of Ni/β-Ga2O3 Schottky barrier diodesconsistently obtained by I-V and C-V measurements
11:10~11:30
Han
UIUC
Diamond p-type lateral Schottky barrier diodes with high breakdown voltage (>4.6kV)
11:30~11:50
Lunch
11:50~13:00
Optoelectronic Devices II, Session Co-Chairs: H. Mohseni and S. Pasayat
Pasayat
U of Wisconsin
(Invited) Porus GaN and its use in optoelectroncis devices
13:00~13:30
Lee
UIUC
Cubic InGaN/GaN Platform for Droop-free Green Light-emitting Diodes
13:30~13:50
Pullano
U of Missouri
Enhancing Single Photon Detection: An Optimized Electronic Interface for Avalanche Diode
13:50~14:10
Han
UIUC
Buried Channel Diamond Photoconductive Semiconductor Switches
14:10~14:30
Mohseni
Northwestern
(Invited) Ultra Low-Energy and Highly Sensitive Nano-Optoelectronics
14:30~15:00
Coffee Break
15:00~15:20
Emerging Devices II, Session Co-Chairs: B. Downey and J. Shi
Timbie
Northwestern
High impedance Resistive switching in Al2O3/TiO2 bilayer ReRam devices for applications in neuromorphic computing
15:20~15:40
Tiessen
UIC
Extensible Gauge-Invariant Finite Difference Method with Spin-Orbit Coupling for Quantum Devices
15:40~16:00
Foradori
Wisconsin
Carbon Nanotube Arrays for High Current Density and Transconductance Field Effect Transistors
16:00~16:20